參數(shù) | 值 |
EPN | HCCZ120R080H1 |
Type | SiC MOS |
BVDSS [V] | 1200.00 |
VGS[V] | -5.00~20.00 |
VTH[V] | 2.00~4.00 |
ID[A] | 36.00 |
PD(W) | 288.00 |
RDON Typ *[mohm]@VGS=20V | 80.00 |
Ciss[pF] | 1410.00 |
Coss[pF] | 97.00 |
Crss[pF] | 55.50 |
Qg(10V)[nC] | 6.70 |
Package | TO-247-4L |