MOS類
MOS class |
Battery Cell # |
Charge Current (max) |
VIN (min) |
VIN (max) |
MOS |
OTG voltage (max) |
OTG current (max) |
Control Interface |
Features |
Package |
HCKD5N65AM2
|
Discretes |
IGBT + Diode |
650 |
5 |
1.45 |
6.35 |
5 |
1.75 |
5 |
30 |
HCKD5N65BM2
|
Discretes |
IGBT + Diode |
650 |
5 |
1.45 |
6.35 |
5 |
1.40 |
5 |
30 |
HCKW40N65H2
|
Discretes |
IGBT + Diode |
650 |
40 |
1.45 |
5.65 |
40 |
1.60 |
30 |
80 |
HCKW60N65BH2A
|
Discretes |
IGBT + Diode |
650 |
60 |
1.65 |
6.05 |
60 |
1.45 |
30 |
80 |
HCKW60N65CH2A
|
Discretes |
IGBT + Diode |
650 |
60 |
1.80 |
5.45 |
30 |
1.35 |
30 |
80 |
HCKW75N65BH2
|
Discretes |
IGBT + Diode |
650 |
75 |
1.80 |
5.6 |
75 |
1.70 |
30 |
80 |
HCKZ75N65BH2
|
Discretes |
IGBT + Diode |
650 |
75 |
1.80 |
5.6 |
75 |
1.70 |
30 |
80 |
HCKW75N65FH2
|
Discretes |
IGBT + Diode |
650 |
75 |
1.80 |
5.6 |
75 |
1.50 |
30 |
80 |
HCKW75N65GH2
|
Discretes |
IGBT + SiC Diode |
650 |
75 |
1.80 |
5.7 |
30 |
1.42 |
30 |
80 |
HCKZ75N65GH2
|
Discretes |
IGBT + SiC Diode |
650 |
75 |
1.80 |
5.7 |
30 |
1.42 |
30 |
80 |
HCKW25N120H2
|
Discretes |
IGBT + Diode |
1200 |
25 |
2.05 |
5.40 |
15 |
1.55 |
20 |
50 |
HCKW40N120H1
|
Discretes |
IGBT + Diode |
1200 |
40 |
1.85 |
5.60 |
20 |
1.65 |
20 |
50 |